研究了 0 .5μm SOI CMOS器件和电路 ,开发出成套的 0 .5μm SOI CMOS工艺 .经过工艺投片 ,获得了性能良好的器件和电路 ,其中当工作电压为 3V时 ,0 .5μm 10 1级环振单级延迟为 42 ps.同时 ,对部分耗尽 SOI器件特性 ,如“浮体”效应、“kink”效应和反常亚阈值特性进行了讨论 The 0. 5μm SOI CMOS devices and circuits were studied and a complete set of 0.5μm SOI CMOS process was developed. After the process of the process, the devices and circuits with good performance were obtained. When the operating voltage was 3V, The single ring delay of the ring oscillator is 42 ps. Meanwhile, the properties of partially depleted SOI devices, such as “floating body” effect, “kink” effect, and anomalous subthreshold characteristics are discussed