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为了提升TiO_2纳米管的光电性能,使用离子注入技术将氮离子注入钛片基底,在石墨烯掺杂的电解液中对氮离子注入过的钛片进行阳极氧化,形成石墨烯沉积氮离子注入TiO_2纳米管(GO-N+-TiO_2NTs).通过扫描电子显微镜(SEM)、X线衍射(XRD)和拉曼光谱对TiO_2纳米管进行表征和元素分析,利用电化学工作站对GO-N+-TiO_2NTs的光电性能进行研究.结果表明:与未经处理的TiO_2纳米管(TiO_2NTs)相比,GO-N+-TiO_2NTs的电子还原性能显著提升,在未经紫外光照的情况下,电化学交流阻抗降至5115Ω,紫外光照下的光电流密度达到12m A/cm2,GO-N+-TiO_2NTs的光电性能明显提高.
In order to improve the optoelectronic properties of TiO 2 nanotubes, ion implantation was used to implant nitrogen ions into the titanium substrate. Anodized titanium was implanted into the electrolyte doped with graphene to form graphene. Nitrogen ions were implanted into TiO 2 The nanotubes (GO-N + -TiO_2NTs) were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The photocatalytic properties of GO-N + -TiO_2NTs The results show that the electron reduction performance of GO-N + -TiO_2NTs is significantly improved compared with that of TiO_2NTs. The electrochemical impedance of the GO-N + -TiO_2NTs is reduced to 5115Ω without UV irradiation, The photo-current density of UV-light reaches 12m A / cm2, and the photoelectric properties of GO-N + -TiO_2NTs are obviously improved.