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We report the demonstration of a monolithic phase shifter employing Bi1.sZn1.0Nb1.5 O7 (BZN)/Ba0.5Sr0.5 TiO3(BST) thin films on sapphire substrates.The BST and BZN thin films are successively deposited by radiofrequency magnetron sputtering.A distributed phase shifter with a coplanar-waveguide transmission line periodically loaded with the BZN/BST capacitors is fabricated.The retu loss of the circuit is better than-13dB from 1 to 12GHz,and it provides 65° phase shift with an insertion loss of-4dB at 12GHz.The results show that BZN/BST thin films are promising candidate dielectrics for rf/microwave tunable applications.