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采用0.18μm SiGe BiCMOS工艺,设计应用于无线局域网(WLAN)802.11b/g 2.4GHz频段的Class AB射频功率放大器。该放大器采用两级放大结构,具有带温度补偿的线性化偏置电路。仿真结果显示:电路的输入匹配S11小于-13 dB,输出匹配S22小-于20 dB,功率增益达27.3 dB,输出1 dB压缩点为23 dBm,最大功率附加效率(PAE)为21.3%;实现了匹配电路、放大电路和偏置电路的片上全集成,芯片面积为1 148μm×1 140μm。
Using a 0.18μm SiGe BiCMOS process, a Class AB RF power amplifier designed for wireless LAN (WLAN) 802.11b / g 2.4GHz is designed. The amplifier uses a two-stage amplification structure, with temperature compensation linearization bias circuit. The simulation results show that the input matching of the circuit is S11 less than -13 dB and the output is smaller than S22. At 20 dB, the power gain reaches 27.3 dB, the output 1 dB compression point is 23 dBm and the maximum power added efficiency (PAE) is 21.3% The matching circuit, amplifier and bias circuit chip fully integrated chip area of 1 148μm × 1 140μm.