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各种低温的精密测量,对1—30K标准锗电阻温度计提出了迫切要求。锗电阻温度计的性能优劣,直接依赖于材料的特性。在1—30K范围锗的电导随温度的变化,跨越两种电导机构(载流子电导和杂质电导),因此其电导温度曲线呈现出不同斜率的过渡。过渡区的特性直接关系到温度计的测温范围,以及函数式的繁简。为了获得具有软过渡特性的温度计用的材料,本文在锗中掺以不同浓度的As,并适量地补偿Ga,用直拉法生长了单晶。材料制备的对比试验表明,用合金法掺As能稳定地控制掺入量;在正压氩气氛中能抑
A variety of low-temperature precision measurement, 1-30K standard Germanium resistance thermometer made an urgent request. German resistance thermometer performance advantages and disadvantages, directly depends on the material properties. The conductivity of germanium varies with temperature across the range of 1 to 30 K, spanning both conductivity mechanisms (carrier conductance and impurity conductance) and thus its conductance temperature profile exhibits a transition of different slopes. The characteristics of the transition zone are directly related to the temperature range of the thermometer, as well as the simplified function of the function. In order to obtain the material for the thermometer with soft transition characteristics, this paper doped different concentrations of As in Ge and compensated Ga moderately, and single crystals were grown by Czochralski method. Comparative tests of material preparation show that alloyed method can stably control the incorporation of As; in a positive pressure argon atmosphere can suppress