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本文采用金属有机物化学气相淀积(MOCVD)方法设计并生长了两组InGaAs/AlGaAs应变多量子阱,量子阱的厚度分别为3nm和6nm,对其光致发光谱(PL)进行了研究,二者的发光波长分别为843nm和942nm,用有限深单量子阱理论近似计算了由于量子尺寸效应和应变效应引起的InGaAs/AlGaAs量子阱带隙的改变,这解释了两组样品室温下PL发射波长变化的原因。
In this paper, two groups of InGaAs / AlGaAs strained MQWs have been designed and grown by metal organic chemical vapor deposition (MOCVD). The thickness of the quantum wells is 3 nm and 6 nm, respectively. The photoluminescence (PL) Who emit light at 843 nm and 942 nm, respectively. The finite-single-quantum-well theory approximates the change in the bandgap of InGaAs / AlGaAs quantum wells due to the quantum size effect and strain effect, which explains the PL emission wavelength The reason for the change.