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报道了用椭圆偏振技术和红外辐射测温技术对ＨｇＣｄＴｅ生长关键参数实时监测的结果，建立了ＨｇＣｄＴｅ材料在生长温度下的标准光学常数数据库，在研究中对生长过程中材料的发射率以及红外辐射强度进行了理论分析，为生长温度的实时精确控制提供了理论依据，并在实验上获得了小于±１℃的生长温度控制精度．
The results of real-time monitoring of the key parameters of growth of HgCdTe by ellipsometry and infrared radiation thermometry were reported. The standard optical constants database of HgCdTe material at growth temperature was established. The emissivity of materials and infrared radiation The strength of a theoretical analysis for the growth of real-time precise temperature control provides a theoretical basis, and experimentally obtained less than ± 1 ℃ growth temperature control accuracy.