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5. Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

来源 :核技术：英文版 | 被引量 : 0次 | 上传用户：hntkpop

【摘 要】

：

Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vaporvacuum arc (MEVVA) ion source. The blender of Nd5Si4 an

【作 者】

：

XIAOZhi－Song XUFei 

【机 构】

：

KeyLaboratoryinUniversityforRadiationBeamTechnologyandMaterialsModification,BeijingRadiationCenter,D

【出 处】

：

核技术：英文版

【发表日期】

：

2001年1期

【关键词】

：

MEVVA离子源 离子移殖 薄膜 光致发光 Photoluminescence  Neodymium silicide  Ion implantation  M 

【基金项目】

：

国家自然科学基金

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Neodymium silicides were synthesized by Nd ion implanted into Si substrates with the aid of a metal vaporvacuum arc (MEVVA) ion source. The blender of Nd5Si4 and NdSi2was formed in a neodymium-implanted silicon thinfilm during the as-implanted state, but

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