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HgI_2晶体作为半导体晶体材料中的一种,其杂质含量对其光电特性有敏感的影响,因此,HgI_2原料的纯度是决定能否生长优质HgI_2单晶体的关键。采用重复升华法和蒸馏法对市售化学纯HgI_2进行提纯,从而得到能适用于汽相法生长HgI_2晶体的原料。
As one kind of semiconductor crystal material, HgI 2 crystal is sensitive to the photoelectric properties because of its impurity content. Therefore, the purity of HgI 2 raw material is the key to determine whether HgI 2 crystal can grow high quality HgI_2 single crystal. Commercially available pure HgI 2 was purified by repeated sublimation and distillation to obtain the raw materials suitable for vapor phase growth of HgI 2 crystals.