最近,据K.S.Rabbani和D.R.Lamb报道,他们在某些n型硅MOS结构上观察到了反常的高频c(v)特性和脉冲c(t)特性,即在一定的高负栅极电压下,上述两种特性曲线都出现了某种“转折”现象.他们不能解释这种现象,只推想它也许和某种局部的体缺陷有关。我们在自己的P型硅MOS结构上,无例外的重复地得到这种“转折“现象,并证明,这一现象是价带电子向表面耗尽区隧道注入的结果.图1(a)是所采用的样品结 Recently, KS Ribabi and DRLamb reported that they observed abnormal high-frequency c (v) characteristics and impulse c (t) characteristics on some n-type silicon MOS structures. That is, at a certain high negative gate voltage, There is a “turning point” in both of these characteristics, and they can not explain the phenomenon, only suggesting that it may be related to some localized body defects. This “transition” phenomenon is repeated on our own p-type silicon MOS structure without exception and proves that this phenomenon is the result of tunneling of valence electrons into the surface depletion region. Figure 1 (a) is The sample used in the knot