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本文采用半经验紧束缚能带理论,通过自洽计算薛定谔方程和泊松方程研究了AlN/GaN共振隧穿二极管中极化效应对电流的影响。结果发现,极化效应导致电流曲线发生不对称性,并影响电流的共振电压位置,这与实验报道的结果相一致。并且随着极化电荷的增加,在一定的偏压条件下,只能观测到一个子能级隧穿或者根本没有负微分电阻现象发生。
In this paper, the semiempirical tight bound band theory is used to study the influence of polarization on the current in AlN / GaN resonant tunneling diode by self-consistent calculation of Schrödinger equation and Poisson’s equation. The results showed that the polarization effect led to asymmetry of the current curve, and affect the current resonant voltage position, which is consistent with the experimental results reported. And with the increase of polarization charge, only a sub-level tunneling can be observed under certain bias conditions or no negative differential resistance phenomenon occurs at all.