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量子点LED以胶体量子点为发光层,通过调节作为发光层量子点的尺寸可以制作出覆盖可见(380-780nm)以及近红外光谱的量子点LED(QD-LED),而且量子点LED器件发出的光谱范围很窄,其光谱半高宽可达30nm。简述了当今国内外关于QD-LED器件结构的研究成果以及器件的制作工艺,介绍了目前课题组最新的一些相关成果。重点阐述了目前已经得到验证的几种量子点器件结构,分析了其存在的优缺点,这些结论对进一步改进QD-LED的结构以及使其可以更有利于商业化提供了参考。
Quantum dot LED uses a colloidal quantum dot as a light-emitting layer, and a quantum dot LED (QD-LED) covering a visible (380-780 nm) and a near-infrared spectrum can be manufactured by adjusting the size of a quantum dot as a light emitting layer, The spectral range is very narrow, the spectral half-width up to 30nm. The research results about QD-LED device structure at home and abroad and the manufacturing process of the device are briefly introduced, and the latest relevant achievements of the current research group are introduced. The structures of several quantum dot devices that have been verified and their advantages and disadvantages are analyzed. These conclusions provide references for further improving the structure of QD-LEDs and making it more commercially available.