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高功率脉冲磁控溅射具有高的金属离化率,在薄膜制备表现出巨大的优势,成为当前磁控溅射技术领域一个新的发展趋势。高功率脉冲磁控溅射的放电特性、等离子体特性等微观参数对薄膜质量控制具有决定性作用,分析宏观参数如何影响微观参数,有利于提高薄膜质量,稳定工艺。因此,本文研究了脉冲与直流电源并联模式的复合高功率脉冲磁控溅射过程中,脉冲电压(400~800 V)对Ti、Cr靶在Ar气氛中的放电特性、等离子体参数(等离子体电势、电子温度、电子密度)、基体电流的影响。结果表明:复合高功率脉冲磁控溅射Ti、Cr靶放电过程中,脉冲电压的增加有利于脉冲作用期间的靶电压、靶电流、基体电流增加;当Ti靶脉冲电压为600 V或Cr靶脉冲电压为700 V时,电子密度出现较大值。Cr靶与Ti靶放电相比,前者的靶电流、基体电流、等离子体电势、电子温度比后者更高,而电子密度却更低。
High-power pulsed magnetron sputtering has high metal ionization rate, showing great advantages in the preparation of thin films, and has become a new development trend in the field of magnetron sputtering. The micro-parameters such as discharge characteristics and plasma characteristics of high-power pulsed magnetron sputtering are decisive for film quality control. Analyzing how macro parameters affect micro-parameters is beneficial to improve film quality and process stability. Therefore, in this paper, the discharge characteristics of Ti and Cr targets in Ar atmosphere under pulsed voltage (400-800 V) were investigated in the pulsed and DC power parallel mode by high power pulsed magnetron sputtering. The plasma parameters (plasma Potential, electron temperature, electron density), the impact of the substrate current. The results show that during the discharge of Ti and Cr targets, the increase of pulse voltage is beneficial to the increase of the target voltage, the target current and the substrate current during pulsed magnetron sputtering. When the Ti target pulse voltage is 600 V or Cr When the pulse voltage is 700 V, the electron density is larger. Compared with the Ti target discharge, the Cr target target current, the substrate current, the plasma potential and the electron temperature are higher than the latter and the electron density is lower.