据《国际半导体》（美）1994年第4期报道，Varian联合公司（美国加洲PaloAlto）已经参加美国设备商和DRAM存储器芯片生产厂商联合组成的一个小组，由美国政府超前研究计划部和五个成员小组共同投资1千万美元，开发先进的介质材料（见“SI”93年第6期第18页）。研究高介质常数铁 According to International Semiconductor (USA) No. 4, 1994, Varian Associates (Palo Alto, CA) has joined a team of U.S. equipment makers and DRAM memory chip makers, led by the U.S. Government’s Advanced Research and Planning Division and five A group of members jointly invested 10 million U.S. dollars to develop advanced media materials (see SI, No. 6, 1993, p. 18). Research high dielectric constant iron