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基于实际生产需求,通过软件仿真对一种新型高压功率器件的终端结构进行了优化设计,并制备了性能良好的器件。使用TCAD软件对新型终端的性能进行了仿真,并对终端结构参数进行了优化。仿真结果表明,新结构可以有效缩小终端面积并提高器件的击穿电压。经过生产工艺优化,对采用新型终端结构和传统结构的垂直双扩散场效应晶体管(VDMOS)(650 V)产品分别进行了流片。实测结果表明,采用新型终端结构器件的反向击穿电压为750 V,终端宽度为119μm,产品良率大于90%。与有相同击穿电压采用传统结构的VDMOS相比,其终端宽度缩小50%以上,良率基本相同。
Based on the actual production requirements, the terminal structure of a new high-voltage power device is optimized by software simulation and a good performance device is prepared. The performance of the new terminal is simulated using TCAD software and the terminal structure parameters are optimized. Simulation results show that the new structure can effectively reduce the termination area and increase the device breakdown voltage. After optimization of the production process, the vertical double diffused field-effect transistor (VDMOS) (650 V) products adopting the new terminal structure and the conventional structure were respectively subjected to the flow sheeting. The measured results show that the reverse breakdown voltage of the new terminal device is 750 V, the terminal width is 119 μm, and the product yield is more than 90%. Compared with the VDMOS with the same breakdown voltage and the conventional structure, the terminal width is reduced by more than 50%, and the yield is basically the same.