论文部分内容阅读
,Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky re
【机 构】
:
State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai,200
【出 处】
:
中国物理B(英文版)
【发表日期】
:
2011年8期
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