Silicon nanocrystals embedded in silicon nitride films were irradiated with Si-ions at 8 MeV in order to modify their optical response. The samples were charact
We consider a simple model of carbon nanotubes (CNTs) subject to external electric field E(t). Using a tight-binding approximation for the description of energy
We present the results concerning photovoltaic materials CuIn1-xGaxSe2 thin films, which were obtained by close-spaced vapor transport “CSVT”. The influence o
The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orie
In this research, the structural phase composition and room temperature luminescence properties of terbium doped zirconium oxide powders obtained by solution co