Free transverse vibration of monolayer graphene,boron nitride(BN), and silicon carbide(Si C) sheets is investigated by using molecular dynamics finite element method.Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and Si C sheets. Natural frequencies in all modes decrease with an increase of the sheet’s size. Graphene exhibits the highest natural frequencies, and Si C sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study. Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (Si C) sheets is investigated by using molecular dynamics finite element method. Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to It is found that aspect ratio and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and Si C sheets. Natural frequencies in all modes decrease with an increase of the sheet’s size. Graphene exhibits the highest natural frequencies, and Si C sheet possesses the highest ones. Missing atoms have minor effects on natural frequencies in this study.