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本文报道的是一种聚(肉桂酸乙烯基氧乙酯)负性光致抗蚀剂。它具有分辨力和灵敏度高、粘附性强、显影后很少产生皱胶、针孔罕见、贮存稳定和等离子去胶效果好等优异性能。在—75℃的温度下,向肉桂酸乙烯基氧乙酯单体中注入三氟化硼乙醚引发剂即可发生阳离子聚合,制得聚(肉桂酸乙烯基氧乙酯)。使用精制单体和助催化剂,在低温条件下,可合成出高分子量和高聚合产率的聚(肉桂酸乙烯基氧乙酯)。通过分级试样的光散射和粘度测定确立了相应的Mark-Houwink方程. 这种负胶的光刻最细条宽为0.5μm,适用于1—1.5μm以上条宽的生产工艺。
This article reports a poly (vinyloxyethyl cinnamate) negative photoresist. It has high resolution and sensitivity, strong adhesion, less wrinkle after development, pinhole rare, stable storage and good plasma de-gluing performance. Cationic polymerization takes place at a temperature of -75 ° C by injecting a boron trifluoride ethyl ether initiator into the vinyloxyethyl cinnamate monomer to produce poly (vinyloxyethyl cinnamate). Using refined monomer and cocatalyst, poly (vinyloxyethyl cinnamate) with high molecular weight and high polymerization yield can be synthesized at low temperature. The corresponding Mark-Houwink equation was established by the light scattering and viscosity measurement of the graded sample.The negative photoresist lithography has the narrowest width of 0.5μm, which is suitable for the production process with the width of 1-1.5μm.