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针对第3代基因测序的需求,提出一种大规模的氮化硅薄膜纳米孔芯片制造技术.通过测量不同膜厚氮化硅薄膜的应力,选择适用于纳米孔制造的最佳厚度为100 nm.采用低压化学气相沉积、反应离子刻蚀和释放工艺制备出高成品率的氮化硅纳米薄膜芯片.在此基础上,使用聚焦离子束和高能电子束实现氮化硅薄膜纳米孔的制造.研究聚焦离子束刻蚀时间、电流与纳米孔直径的关系.实验结果表明,采用聚焦离子束将氮化硅薄膜的厚度减薄至40 nm以下时,制作纳米孔的效果更好.采用聚焦离子束制造的氮化硅薄膜纳米孔最小直径为26 nm,而采用电子束制备的最小直径可达3.5 nm.该方法为基于固体纳米孔的DNA测序检测提供了有力的支撑.
In order to meet the requirement of the third generation gene sequencing, a large-scale silicon nitride thin film nanoporous chip manufacturing technology is proposed.Through measuring the stress of the silicon nitride films with different film thickness, the optimal thickness for nanohole fabrication is selected to be 100 nm The high yield silicon nitride thin film nanocapsule was fabricated by low pressure chemical vapor deposition, reactive ion etching and release process, and the production of silicon nitride thin film nanopore was achieved by focused ion beam and high energy electron beam. The research focuses on the relationship between ion beam etching time, current and nanopore diameter.The experimental results show that nanopore is better when the thickness of silicon nitride thin film is reduced to less than 40 nm by focused ion beam.The focused ion The minimum diameter of the nanostructured silicon nitride thin film nanoparticle is 26 nm, and the minimum diameter of the prepared nanofilm can reach 3.5 nm. This method provides a powerful support for the detection of DNA based on solid nanopore.