为了对液相外延(LPE)和汽相外延(VPE)器件之间的差别获得一个基本的了解,通过使GaAs_(1-x)P_x:N二极管从正向偏置换到零偏置并监视电致发光衰减的方法研究了其电致发光寿命(τ_(EL))。τ_(EL)随电流密度J的增加而单调地增加直到J近似为20A/cm~2为止,其后保持恒定。对τ_(EL)起主要影响的材料参数是n-边施主浓度N_D—N_(Ao)如图所 To gain a basic understanding of the differences between liquid phase epitaxy (LPE) and vapor phase epitaxy (VPE) devices, by shifting the GaAs_ (1-x) P_x: N diode from forward bias to zero and monitoring the power The luminescence decay method was used to study its electroluminescence lifetime (τ_ (EL)). τ_ (EL) monotonically increases with the increase of current density J until J is approximately 20A / cm ~ 2 and then remains constant. The material parameter that mainly affects τ_ (EL) is the n-side donor concentration N_D-N_ (Ao)