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自20世纪80年代以来,聚合物半导体材料及其薄膜场效应晶体管器件(OFETs)已取得系列突破性进展.目前,已有数百种聚合物半导体材料被成功应用于OFETs中,空穴迁移率值最高已达36.3 cm~2·V~(-1)·s~(-1),可与有机小分子半导体材料甚至可同无定形硅相媲美.综述了近年来国内外高迁移率聚合物半导体的最新进展.分类对比总结和评述了空穴传输型(p-型)、电子传输型(n-型)和双极传输型聚合物半导体材料,并对聚合物半导体材料分子设计思路、薄膜OFETs器件制备及其性能参数进行了重点阐述.同时,总结了聚合物半导体材料的分子结构、聚集态结构与OFETs器件性能之间的内在关系,为今后设计与合成综合性能优异的聚合物半导体材料提供一定理论指导.
Since the 1980s, a series of breakthroughs have been made in polymer semiconductor materials and their field effect transistor devices (OFETs) .However, hundreds of polymer semiconductor materials have been successfully used in OFETs. The hole mobility The highest value of 36.3 cm 2 · V -1 · s -1 can be compared with that of organic small molecule semiconductors even with amorphous silicon.It is reviewed that the high mobility polymer Recent advances in semiconductors are summarized and reviewed in detail for the hole transport type (p-type), electron transport type (n-type) and bipolar transmission type polymer semiconductor materials, and the design concept of the polymer semiconductor material molecules, OFETs devices and their performance parameters are emphatically described.At the same time, the inherent relationship between the molecular structure of polymer semiconductors and the performance of OFETs devices is summarized, and the polymer semiconductor materials with excellent performance in the future are designed and synthesized Provide some theoretical guidance.