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采用静电自组装方法在五氧化二钽(Ta2O5)介质氧化膜上制备了聚二烯丙基二甲基氯化铵(PDDA)/聚苯乙烯磺酸钠(PSS)和聚二烯丙基二甲基氯化铵/聚-3,4-乙烯二氧噻吩-聚苯乙烯磺酸钠(PEDOT-PSS)超薄膜.研究了两种自组装超薄膜在Ta2O5介质氧化薄膜上的组装特性.结果表明两种自组装膜能够稳定地组装于Ta2O5介质膜表面,并有效降低薄膜的表面粗糙度.进一步研究了两种自组装超薄膜修饰的Ta2O5电容结构的电性能.结果表明静电自组装膜对Ta2O5介质膜表面进行修饰后,有效地隔离了介质氧化膜中的缺陷,降低了电容的漏电流并提高耐电压能力;研究还发现不同厚度的超薄膜对Ta2O5电容结构的耐压特性有不同程度的影响,较厚的薄膜可以更好地提高电容的耐压能力并降低漏电流,但会增加电容的等效串联电阻(ESR).另外,在相同薄膜层数的情况下,聚合物电解质PEDOT-PSS良好的导电性能降低了复合超薄膜的电阻,使得PDDA/PEDOT-PSS修饰的电容结构ESR值较低.
The polydiallyldimethylammonium chloride (PDDA) / sodium polystyrenesulfonate (PSS) and polydiallylbis (2-hydroxyethyl) sulfite were prepared on the tantalum oxide (Ta2O5) Methyl ammonium chloride / poly-3,4-ethylenedioxythiophene-sodium polystyrenesulfonate (PEDOT-PSS) ultrafilm.The assembly characteristics of two self-assembled ultrathin films on the Ta2O5 dielectric thin films were investigated.Results Indicating that the two self-assembled films can be stably assembled on the surface of Ta2O5 dielectric film and effectively reduce the surface roughness of the film.Further study of the electrical properties of two self-assembled ultrathin film modified Ta2O5 capacitor structure results show that the electrostatic self-assembled film pairs Ta2O5 dielectric film surface modification, effectively isolated the dielectric oxide film defects, reducing the capacitor leakage current and improve the ability to withstand voltage; also found different thickness of the ultra-thin film Ta2O5 capacitor structure of the pressure resistance characteristics of varying degrees , The thicker film can better improve the voltage resistance of the capacitor and reduce the leakage current but increase the equivalent series resistance (ESR) of the capacitor.Furthermore, in the case of the same film layer number, the polymer electrolyte PEDOT -PSS Good electrical conductivity Reducing the resistance of the composite ultrathin film, such PDDA / PEDOT-PSS-modified low capacitance structure ESR value.