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对6种不同工艺的NPN双极晶体管进行了高、低剂量率及变温辐照的~(60)Coγ辐照实验。结果显示,6种工艺的NPN双极晶体管均有显著的低剂量率辐照损伤增强效应。而变温辐照损伤不仅明显高于室温高剂量率的辐照损伤,且能很好地模拟并保守地评估不同工艺的NPN双极晶体管低剂量率的辐照损伤。对实验现象的机理进行了分析。
Six kinds of NPN bipolar transistors with different process were irradiated by high, low dose and temperature. The results show that the six kinds of NPN bipolar transistor technology have significant low dose rate radiation damage enhancement effect. The variable temperature radiation damage was not only significantly higher than the room temperature high dose rate radiation damage, and can well simulate and conservatively evaluate the low dose rate radiation damage of different process NPN bipolar transistor. The mechanism of experiment phenomenon is analyzed.