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利用（Ｐｈ，Ｌａ）ＴｉＯ３陶瓷靶材，采用射频磁控溅射技术室温淀积，其后在６００℃下退火，制备ＰＬＴ铁电薄膜。通过对薄膜进行ＸＰＳ和ＥＤＡＸ分析，发现薄膜表面富钛。与利用其它工艺技术如多离子束反应共溅射、ｓｏｌ－ｇｅｌ等技术制备的ＰＬＴ铁电薄膜进行对比可以看出，利用不同技术制备的铁电薄膜，具有不同的表面态。
The (Ph, La) TiO3 ceramic target was deposited by RF magnetron sputtering at room temperature and then annealed at 600 ℃ to prepare a PLT ferroelectric thin film. By XPS and EDAX analysis of the film, it was found that the surface of the film is titanium rich. Compared with the PLT ferroelectric thin films prepared by other techniques such as co-sputtering by multi-ion beam reaction and sol-gel, it can be seen that ferroelectric thin films prepared by different techniques have different surface states.