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为了优化应用于光纤通讯和CATV系统需求的高性能的量子阱激光器,对波长在1.55μm左右的InGaAsP/InP量子阱激光器的有源区结构和量子阱数目进行了优化分析。本文针对In(1-x)GaxAsyP(1-y)量子阱激光器,提供了一种有源区结构优化方法。在势阱层组分为In_(0.76)Ga_(0.24)As_(0.81)P_(0.19),厚度为5nm;势垒层组分为In_(0.751)Ga_(0.249)As_(0.539)P_(0.461),厚度为10nm时,激光器的各项性能参数达到最优。在此基础上,研究量子阱个数对激光器平均载流子浓度、输出光功率和阈值电流的影响。采用ALDS软件进行仿真,对比量子阱个数分别为5、6、7、8、9、10、11时,激光器的各项输出参数。对不同量子阱个数的激光器,分别进行结构和材料求解,并进行阈值、稳态、分布和光谱、小信号以及噪声分析。仿真结果表明,当量子阱个数为8时,在偏置电流为150mA,激光器温度为300K情况下,激光器的平均载流子浓度达到最大值0.745×1018/cm~3,输出光功率达到最大值28.8m A,阈值电流达到最低值15.7mA,阈值电流密度达到最低值0.8KA/cm~2,边模抑制比达到最高值22.13dB,驰豫振荡频率达到最高值13.8GHz,P-I曲线及斜率效率达到最优值。
In order to optimize high-performance quantum well lasers for optical fiber communication and CATV system, the structure of the active region and the number of quantum wells in InGaAsP / InP quantum well lasers with a wavelength of about 1.55μm were optimized. In this paper, we propose an active region structure optimization method for In (1-x) GaxAsyP (1-y) quantum well laser. (0.76) Ga_ (0.24) As_ (0.81) P_ (0.19), and the thickness is 5 nm in the well layer; In_ (0.751) Ga_ (0.249) As_ (0.539) P_ (0.461) , The thickness of 10nm, the laser performance parameters to achieve the best. Based on this, the influence of the number of quantum wells on the laser average carrier concentration, output optical power and threshold current is studied. Using ALDS software to simulate the number of quantum wells were 5,6,7,8,9,10,11, the laser output parameters. The different number of quantum wells lasers, respectively, to solve the structure and material, and threshold, steady-state, distribution and spectrum, small signal and noise analysis. The simulation results show that when the number of quantum wells is 8, the average carrier concentration reaches 0.745 × 1018 / cm ~ 3 at the bias current of 150mA and the laser temperature is 300K, and the output optical power reaches the maximum Value of 28.8mA, the threshold current reached the minimum value of 15.7mA, the threshold current density reached the minimum value of 0.8KA / cm ~ 2, the side mode suppression ratio reached the highest value of 22.13dB, the relaxation oscillation frequency reached the maximum value of 13.8GHz, PI curve and slope Efficiency reaches the optimal value.