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本文用磁控溅射和旋涂法成功制备了HfAlOx/γ-Fe2O3/HfAlOx堆栈结构,该堆栈结构具有典型的双极性电阻开关特性:在-1V读取电压下可获得高达90的高/低电阻态阻值比,该比值可稳定维持近50个循环周期,远优于相同条件下制备的γ-Fe2O3纳米微粒薄膜.线性拟合电流-电压对数曲线结果表明,低电阻态时,样品漏电流特性满足欧姆隧穿机制;高电阻态时,低电场下的漏电流以缺陷主导的空间电荷限制隧穿电流为主,高电场下为串联内置电阻的欧姆隧穿电流;该堆栈结构的电阻开关特性是“体导电细丝通道”和“电场作用下界面势垒改变”共同作用的结果.
In this paper, the HfAlOx / γ-Fe2O3 / HfAlOx stack structure has been successfully prepared by magnetron sputtering and spin-coating. The stack structure has typical bipolar resistance switching characteristics: up to 90 high / Low resistance state resistance ratio, the ratio can be stable for nearly 50 cycles, far superior to the same conditions prepared γ-Fe2O3 nanoparticle film linear fit current-voltage logarithmic curve results show that the low resistance state, The leakage current characteristics of the sample satisfy the ohmic tunneling mechanism. In the high resistance state, the leakage current in the low electric field is dominated by the defect space tunneling current, and the high electric field is the ohmic tunneling current in series with the built-in resistance. The stack structure The resistance switching characteristics are the result of the interaction between the “body-conducting filament channel” and the “interface barrier change” due to the “electric field”.