为了降低传统沟槽MOSFET的导通电阻和栅漏电容,科研人员提出一种具有电荷平衡结构的SG-RSO MOSFET。在此基础上,利用电荷平衡理论计算出SG-RSO MOSFET结构的主要参数,并借助TCAD仿真软件对外延层厚度及其掺杂浓度、场板氧化层厚度和沟槽深度等主要参数进行合理优化设计。最终,仿真得到击穿电压为92.6 V、特征导通电阻为19.01 mΩ·mm~2、特征栅漏电容为1.45 n F·cm~(-2)的SG-RSO MOSFET。该器件性能优于传统沟槽MOSFET。 In order to reduce the on-resistance and gate-drain capacitance of conventional trench MOSFETs, researchers propose a charge-balanced SG-RSO MOSFET. On this basis, the main parameters of the SG-RSO MOSFET structure are calculated by the charge balance theory. The main parameters of the epitaxial layer thickness and its doping concentration, the field oxide layer thickness and the trench depth are reasonably optimized by TCAD simulation software design. Finally, the SG-RSO MOSFET with a breakdown voltage of 92.6 V, a characteristic on-resistance of 19.01 mΩ · mm -2 and a characteristic gate-leakage capacitance of 1.45 nF · cm -2 was obtained. This device outperforms traditional trench MOSFETs.