目前对于紧凑型高效率的功率转换系统的需求日益增长,电力工程师们也一直在这一领域努力研究。他们考虑采用更为先进的功率器件,例如碳化硅功率MOSFET,能在操作频率上实现提升,减少无源器件的使用并且降低热沉的尺寸。尽管与传统硅材料IGBT相比,碳化硅MOSFET的零售价要高出许多,但实际应用中,能为系统层面带来的成本缩减和整体性能提升则完全弥补了性 The current demand for compact and efficient power conversion systems is on the rise, and power engineers have been working hard in this area. They consider the use of more advanced power devices, such as silicon carbide power MOSFETs, that can operate at increased frequency, reduce the use of passive components, and reduce the size of heat sinks. Although silicon carbide MOSFETs have a much higher retail price than traditional silicon IGBTs, in practical applications, the system cost savings and overall performance improvements can be fully offset