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设计并制造了新的潘宁型等离子体源实验装置,分析了等离子体的发射光谱和产生A lN的动力学机理。在室温条件下,纯氮气的工作环境中用潘宁放电离子源溅射的方法,在S i(100)衬底上制备了纳米级的光滑平整A lN薄膜。本文用扫描电镜(SEM),原子力显微镜(ATM),红外吸收光谱(FT IR)和拉曼光谱(R am ansh ift)等测试分析技术用来研究了薄膜的微结构特征。
A new Penning type plasma source experimental device was designed and fabricated. The emission spectra of the plasma and the kinetics mechanism of generating AlN were analyzed. Nanostructured smooth AlN films were prepared on Si (100) substrates by sputtering at Penning discharge source in a pure nitrogen atmosphere at room temperature. In this paper, the microstructure characteristics of the films were investigated by SEM, SEM, FT-IR and Raman scattering.