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提出一种基于改变灰阶编码掩模的单元形状和位置的掩模设计新方法 ,并根据成像过程中的非线性因素 ,用这种方法对掩模图形进行了预畸变校正。根据部分相干光成像理论和抗蚀剂曝光显影模型 ,模拟计算了这种灰阶编码掩模产生的空间光强分布和光刻胶上的浮雕结构。采用电子束曝光系统制作了这种掩模 ,并在光刻胶上获得具有连续面形的微透镜的阵列
A new mask design method based on changing the shape and location of the grayscale coding mask was proposed. According to the nonlinear factors in the imaging process, the mask pattern was pre-distorted by this method. Based on the partially coherent light imaging theory and the resist exposure and development model, the spatial light intensity distribution and the relief structure on the photoresist were simulated and calculated. This mask was made using an electron beam exposure system and an array of microlenses having a continuous profile was obtained on the photoresist