In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns,respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications. In this letter, a phase change random access memory (PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor (CMOS) technology. The PCRAM was successfully embedded without changing any logic device and process, where 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns, respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications.