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通过设计包括不同Al含量的单层p-AlGaN电子阻挡层与10对p-AlGaN/GaN超晶格电子阻挡层的三种紫光LED结构,利用APSYS软件理论模拟研究了400nm紫光LED的光电性能,并着重研究了电子阻挡层结构对紫光LED的光电性能的影响。APSYS软件的模拟结果显示,10对p-AlGaN/GaN超晶格电子阻挡层对光输出功率(LOP)的提升优于单层p型AlGaN电子阻挡层。为验证理论模拟结果,使用MOCVD系统制备了三种紫光LED外延片,并将外延片加工成紫光芯片,分析了不同电子阻挡层对紫光LED光电性能的影响。实验的光电测试结果显示,带有10对p-AlGaN/GaN超晶格电子阻挡层的400nm紫光LED发光效率高于另外两种紫光LED,在输入20mA电流条件下,其光输出功率为21mW,具有商用价值。
By designing three kinds of violet LED structures including single-layer p-AlGaN electronic barrier layer with different Al contents and 10 pairs of p-AlGaN / GaN superlattice electronic barrier layer, the photoelectric properties of 400 nm violet LED were simulated by APSYS software. The effects of the structure of the electron blocking layer on the photoelectric properties of violet LEDs were also studied. Simulation results of the APSYS software show that the enhancement of the optical output power (LOP) of 10 pairs of p-AlGaN / GaN superlattice electron barriers is better than that of a single p-type AlGaN electron blocking layer. In order to verify the theoretical simulation results, three kinds of violet LED epitaxial wafers were prepared by MOCVD system, and the epitaxial wafers were processed into violet chips. The influence of different electron blocking layers on the photovoltaic properties of violet LEDs was analyzed. The experimental results show that the luminescence efficiency of 400nm violet LED with 10 pairs of p-AlGaN / GaN superlattice electron blocking layer is higher than that of the other two violet LEDs. Under the input current of 20mA, its light output power is 21mW, With commercial value.