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采用脉冲激光沉积法 ,生长出没有组分偏析 ,晶体质量好的 Zn1 - x Mgx O薄膜 (x=0 .2 ) .研究了衬底温度对Zn0 .8Mg0 .2 O薄膜晶体质量、晶粒度大小的影响 ,发现最佳衬底温度为 6 5 0℃左右 .对 Zn0 .8Mg0 .2 O薄膜进行了光致发光分析 ,发现相对 Zn O晶体有 0 .4 e V的蓝移
Zn1 - xMgxO thin films (x = 0.2) with no component segregation and good crystal quality were grown by pulsed laser deposition.The effects of substrate temperature on the crystal quality, crystallite size Size and the best substrate temperature was found to be 650 ℃ .The photoluminescence analysis of Zn0.8Mg0.2O thin films showed that there was a blue shift