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用金属有机物气相外延在纳米棒ZnO模板上沉积AlN薄膜.SEM测试表明该薄膜形成了一种倾倒纳米棒的表面.而GIXRD测试进一步证实它是纤锌矿结构的AlN,晶粒尺度约为12nm,接近于ZnO纳米棒的直径(30nm).这意味着纳米棒结构的ZnO能限制AlN的横向生长.此外,高温下用H2刻蚀ZnO直接在生长中实现了外延层的剥离.最终得到了无支撑的AlN纳米晶,完整无破损的区域约为1cm×1cm.定义这个生长机制为“生长-刻蚀-合并”过程.
AlN thin films were deposited on the nanorods ZnO template by metallorganic vapor phase epitaxy.The SEM results showed that the films formed a kind of dipped nanorods surface.The GIXRD test further confirmed that it is a wurtzite AlN with a grain size of about 12nm , Which is close to the diameter of ZnO nanorods (30nm), which means that nanorod ZnO can limit the lateral growth of AlN.In addition, the epitaxial layer is peeled off directly by H2 etching at high temperature, The unsupported AlN nanocrystals have an intact area of about 1 cm × 1 cm. This growth mechanism is defined as the “growth-etch-merge” process.