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研究长波长InAsSb半导体材料在退火处理前、后,傅里叶变换红外(FTIR)透射光谱、组份元素In、Sb和As在外延层中的分布以及电学性质的变化。用熔体外延(ME)技术,在InAs衬底上生长InAs0.05Sb0.95外延层,外延层的厚度达到100μm。在350℃下,在氢气氛中对样品进行了11h的退火。测量结果表明,退火处理使InAsSb样品的电子迁移率从300K下的43600cm2/(V·s)提高到77K下的48300cm2/(V·s),材料的电学性能及元素分布均匀性得到了明显改善。
The distribution and electrical properties of In, Sb and As in the epitaxial layer were investigated before and after the annealing of long-wavelength InAsSb semiconductor materials by Fourier transform infrared (FTIR) spectroscopy. The InAs0.05Sb0.95 epitaxial layer was grown on InAs substrate by melt epitaxy (ME). The thickness of the epitaxial layer reached 100μm. The samples were annealed at 350 ° C for 11 h in a hydrogen atmosphere. The results show that the electron mobility of InAsSb sample is improved from 43600cm2 / (V · s) at 300K to 48300cm2 / (V · s) at 77K by annealing treatment. The electrical properties and the uniformity of the elemental distribution of InAsSb samples are improved obviously .