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利用光热电离谱技术研究了4．5K下高纯n－GaAs外延材料的远红外光电导响应借．给出CPE法和VPE法生长的高纯GaAs材料残留浅施主杂质分别是S、Sn和Sn、P等杂质．实验结果表明本所高纯GaAs组采用的LPE生长技术能有效抑制杂质St和Sn的沾污．
The far-infrared photoconductive response of high-purity n-GaAs epilayers at 4.5K was studied by using photothermal ionization spectroscopy. The residual shallow donor impurities of high purity GaAs materials grown by CPE and VPE methods are S, Sn, Sn, P and other impurities. The experimental results show that LPE growth technology adopted by our high-purity GaAs group can effectively inhibit the contamination of impurities St and Sn.