Two-dimensional(2D)semiconductors isoelectronic to phosphorene have been drawing much attention recently due to their promising applications for next-generation
An analytical drain current model on the basis of the surface potential is proposed for indium-gallium zinc oxide(InGaZnO)thin-film transistors(TFTs)with an ind
We fabricate Sm-doped Ca3Co4O9+δ(CCO)bulk materials in magnetic field during both processes of chemical synthesis and cold pressing.The structure and electrica