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利用CERN/SPS加速器提供的5、10、20、30、40 GeV电子束和100 GeV的μ粒于束分别对PbWO4晶体探测器读出单元PIN硅光管存在的PUNCH-THROUGH效应进行了研究。图1是100GeV μ粒子束测得的能谱。图中左右峰分别为μ粒子能量沉积在PbWO4晶体中并且剩余的带电粒子不穿过与穿过硅光管所得到的能峰,两峰位之差为212 MeV,对应于μ-MIP粒子在PIN硅中的能耗为212MeV。PIN硅光管的PUNCH-THROUGH效应存在显然使信号能量分辨率变坏,甚至产生假信号,影响正常光子的测量。从图1可以看到,两峰分辨很好,它表明以PIN硅光管作为PbWO4晶体探测器读出单元的系统能量分辨率足够好。作为比较,图2引用了
The PUNCH-THROUGH effect of PbWO4 crystal detector read-out cell PIN silicon light tube was studied by using 5, 10, 20, 30, 40 GeV electron beam and 100 GeV particle provided by CERN / SPS accelerator respectively. Figure 1 is a 100GeV μ particle beam measured energy spectrum. The left and right peaks in the figure are respectively μ particle energy deposited in the PbWO4 crystal and the remaining charged particles do not pass through the energy peak obtained through the silicon light pipe. The difference between the two peak positions is 212 MeV, corresponding to the ratio of μ-MIP particles in The energy consumption in PIN silicon is 212 MeV. The existence of PUNCH-THROUGH effect of PIN silicon light tube apparently deteriorates the energy resolution of the signal and even generates a glitch, which affects the measurement of normal photons. As can be seen from Figure 1, the two peaks are well resolved, indicating that the system’s energy resolution with a PIN silicon phototube as a unit for reading PbWO4 crystal detectors is good enough. As a comparison, Figure 2 is quoted