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太赫兹片上系统是近年来太赫兹研究的热点,是太赫兹系统集成的关键技术。太赫兹微带线(MSL)是太赫兹片上系统的关键,微带线设计的合理性,直接影响着太赫兹片上系统的灵敏度和准确度,为了更好地制作片上系统,以理论模型为参照,利用HFSS(High Frequency Structure Simulator)软件对太赫兹传输线及带阻滤波结构进行了系统的仿真研究。首先研究了微带线结构、微带带阻滤波结构的传输特性,并从应用的角度首次将样品引入仿真模型,研究了以Ga As为例的介电样品对微带滤波结构的滤波特性的影响。设计了358 GHz的微带滤波器结构,并通过改变放置在其上的Ga As样品参数,发现样品对微带滤波结构的中心滤波频率有明显影响。为太赫兹微带线的设计制作提供了精确的理论数据。
The terahertz system-on-chip is a hot spot in terahertz research in recent years and a key technology for terahertz system integration. The terahertz microstrip line (MSL) is the key of the THz system. The rationality of the microstrip line design directly affects the sensitivity and accuracy of the THz system. In order to make the system-on-chip better, the theoretical model is used as a reference The system simulation of terahertz transmission line and band-stop filter was carried out by using HFSS (High Frequency Structure Simulator) software. Firstly, the transmission characteristics of the microstrip line structure and the microstrip band-stop filter structure were studied. The sample was introduced into the simulation model for the first time from the application point of view. The filter characteristics of the microstrip filter structure with GaAs as an example influences. The structure of the 358 GHz microstrip filter was designed. By changing the parameters of Ga As placed on it, it was found that the sample had a significant influence on the center frequency of the microstrip filter. The design of terahertz microstrip line provides accurate theoretical data.