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本文探讨了CuZnAl,CuZnAlMn合金的弹簧试样在相变热循环过程中双程记忆性能的变化规律,表明引起铜基形状记忆合金双程记忆性能衰减的主要因素是由于位错增殖;在有外加应力条件下热循环时,还要考虑应力诱发马氏体对记忆性能的贡献。少量Mn的加入使CuZnAl合金在热循环过程中位错增殖加速,同时使应力诱发马氏体容易产生,结果导致在有外加应力条件下热循环时Mn能缓和记忆性能的衰减。
In this paper, the variation of two-way memory performance of CuZnAl and CuZnAlMn alloy spring-loaded samples during phase-change thermal cycling was investigated. It is found that the main factor contributing to the two-way memory loss of Cu-based shape memory alloys is due to dislocation proliferation. Thermal stress under stress conditions, but also consider the stress-induced martensite contribution to memory performance. The addition of a small amount of Mn accelerates the dislocation propagation in the CuZnAl alloy during thermal cycling, and at the same time makes the stress-induced martensite easy to produce. As a result, Mn can ease the degradation of memory performance under thermal cycling under external stress.