400nm IMPL RADFET剂量计的性能研究

来源 :高能物理与核物理 | 被引量 : 0次 | 上传用户:szw_jlcc
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RADFET多通道探测器将要用来测量北京谱仪BESⅢ中量能器附近的累计剂量.探测器的技术关键是对400nm IMPL RADFET剂量计具体性能的了解和掌握.本工作以60Co γ源为辐射源,实验研究了400nm IMPL RADFET剂量计的各项性能,包括RADFET通道间的一致性、测量累积剂量时的辐照强度相关性以及退火特性等,同时也讨论了测量数据的拟合方法,为该类型RADFET剂量计在RADFET多通道探测器的设计、建造和其他方面的应用提供了实验基础.
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