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用直流磁控溅射在300℃不同Ru-x%Cr(x=0,20,40)下底层沉积制备了Co-15%W(原子分数)磁性薄膜。用XRD表征了薄膜的精细晶体结构,分析了Co-W和Ru-Cr层的取向关系,估算了薄膜层的晶格常数、c轴分散角、fcc/hcp体积百分比和堆垛层错密度值。结果表明,随着Ru-Cr下底层Cr成分的增加Co-W磁性层和Ru-Cr下底层间的晶格错配度降低,hcp-Co的晶格常数比c/a随之减小。磁性能测试结果证实,由于Co-W磁性层中晶格常数比c/a的减小磁性层的磁各向异性能显著提高。
Co-15% W (atomic fraction) magnetic thin films were deposited by DC magnetron sputtering at a substrate temperature of 300 ℃ under different Ru-x% Cr (x = 0, 20, 40) The crystal structure of the films was characterized by XRD. The orientation relationship between Co-W and Ru-Cr layers was analyzed. The lattice constants, c-axis dispersion angles, volume fraction of fcc / hcp and stacking fault density . The results show that with the increase of Cr content in the Ru-Cr underlayer, the lattice mismatch between the Co-W magnetic layer and the Ru-Cr underlayer decreases and the lattice constant ratio c / a of the hcp-Co decreases. The results of the magnetic properties test confirmed that the magnetic anisotropy of the magnetic layer can be remarkably improved due to the decrease of the lattice constant ratio c / a in the Co-W magnetic layer.