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抑制射频真空系统表面二次电子倍增的一种常用方法是在系统内表面镀TiN薄膜,因为TiN薄膜具有较低的二次电子发射率。但对于真空应用来说,必须关注TiN薄膜的真空释气率问题。本文综述了国内外在TiN镀层真空特性方面的研究现状,其中涉及TiN镀层低释气率的物理机制、产生低释气率TiN薄膜的最优化镀膜条件以及两种常用镀膜方法的比较。
A common method to suppress the secondary electron multiplication on the surface of RF vacuum system is to deposit TiN film on the inner surface of the system because TiN film has lower secondary electron emissivity. However, for vacuum applications, attention must be paid to the problem of vacuum gas evolution in TiN films. This review summarizes the current research on the vacuum properties of TiN coating both at home and abroad, including the physical mechanism of low outgassing rate of TiN coating, the optimal coating conditions to produce low outgassing TiN film, and the comparison of two common coating methods.