论文部分内容阅读
据《NIKKEI MicroDevices》2009年第9期报道,X参数在高频电路设计中越来越受到设计工程师的关注。三菱电机GaN HEMT放大器研究人员力推该参数的效用。X参数是美国Agilent Technologies公司在S参数扩展后而编成的。三菱电机工程师称,S参数只是处理基本频率的,而X参数的特点是应
According to “NIKKEI MicroDevices” 2009 No. 9 report, X parameters in the design of high-frequency circuits more and more by design engineers. Mitsubishi Electric GaN HEMT amplifier researchers push the effectiveness of this parameter. The X parameter is compiled by American Agilent Technologies after the S parameter is expanded. Mitsubishi Electric engineers said S parameters only deal with the basic frequency, and X parameters are characterized by