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采用一种基于Bi2Sr2CaCu2O8+x单晶制备约瑟夫逊本征结的新方法——酸刻法制备本征结.通过盐酸腐蚀的方法,可以构造出本征结的台式结构(mesa),同时使周围的单晶呈绝缘性.通过选择合适的盐酸浓度,保持了单晶表面一定的平整度,以方便继续做顶电极.采用四端子法测量了样品的低温电流(I)-电压(V)特性,通过改变盐酸浓度以及浸泡时间,可以实现对结数目的控制,并且使mesa的厚度和单晶反应层的平均高度相一致.
A new method based on Bi2Sr2CaCu2O8 + x single crystals for the preparation of Josephson intrinsic junctions, the acid-etching method, was used to fabricate the intrinsic junction.It is possible to construct the mesa of the intrinsic junction by hydrochloric acid etching, Of the single crystal was insulative.A suitable degree of hydrochloric acid was chosen to maintain a certain degree of flatness on the surface of the single crystal so as to facilitate the continued fabrication of the top electrode.The low temperature current (I) -voltage (V) characteristic of the sample was measured by a four-terminal method , By changing the hydrochloric acid concentration and soaking time, it is possible to control the number of junctions and to make the thickness of mesa coincide with the average height of the single crystal reaction layer.