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Ｂｉ（１２）ＴｉＯ（２０）（ＢＴＯ）晶体属于Ｓｉｌｌｅｎｉｔｅ结构，它与Ｂｉ（１２）ＳｉＯ（２０）（ＢＳＯ），Ｂｉ（１２）ＧｅＯ（２０）（ＢＧＯ）晶体在结构和性能上具有许多相似之处．由于Ｂｉ（１２）ＴｉＯ（２０）晶体是非一致共熔化合物，因此，在其晶体的生长过程中，必须使用过量的Ｂｉ２Ｏ３作自溶剂，本论文采用提拉法，在低拉速、较高转速的生长条件下，生长出了质量较好的纯Ｂｉ（１２）ＴｉＯ（２０）晶体和不同掺Ｃｅ量的Ｂｉ（１２）ＴｉＯ（２０）晶体，并详细地讨论了晶体中的宏观缺陷，特别是包裹体．Ｂｉ（１２）ＴｉＯ（２０）中的包裹体的形状和出现位置与晶体生长时的提拉速度、旋转速度、生长时固液界面的形状以及掺杂比例等因素有着密切的关系．
The Bi (12) TiO (20) (BTO) crystals belong to the Sillenite structure and have many similarities in structure and properties to the Bi (12) SiO (20) (BSO) and Bi (12) GeO (20) Where. Since Bi (12) TiO (20) crystal is a non-uniform eutectic compound, Bi2O3 must be used as a self-solvent in its crystal growth process. In this paper, , Pure Bi (12) TiO (20) crystals with different mass and Bi (12) TiO (20) crystals doped with different amounts of Ce have been grown under the optimum conditions. The macroscopic defects in the crystals are discussed in detail Is the inclusion body. The shape and location of inclusions in Bi (12) TiO (20) are closely related to the pulling speed, the rotation speed, the shape of the solid-liquid interface during growth and the doping ratio during the growth of the crystal.