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将负阻提升技术引入到混沌振荡器的设计中,通过理论推导、数值计算和测试验证来优化电路结构,提供参数选取规则,从理论和实验两方面验证,在双电感的比值达到最优值时振荡器负阻能够得到大幅提升。并基于负阻提升技术提出了双电感结构的微波Colpitts混沌振荡器。新结构电路的最高混沌振荡基频为1.78 GHz,较经典电路提升了39%;带宽达到4.60 GHz(0.80~5.40 GHz),较经典电路提升了119%。测试结果表明,优化的双电感结构能有效提升混沌振荡基频和带宽。
The negative resistance enhancement technology is introduced into the design of chaotic oscillator. The circuit structure is optimized by theoretical derivation, numerical calculation and test verification. The rules of selecting parameters are validated from both theoretical and experimental aspects. When the ratio of two inductances reaches the optimal value Oscillator negative resistance can be significantly improved. The microwave Colpitts chaos oscillator with dual inductance structure is proposed based on the negative resistance enhancement technology. The maximum chaotic oscillation fundamental frequency of the new circuit is 1.78 GHz, which is 39% higher than that of the classical circuit. The bandwidth is 4.60 GHz (0.80 ~ 5.40 GHz), which is 119% higher than that of the classical circuit. The test results show that the optimized dual inductor structure can effectively improve the fundamental frequency and bandwidth of chaotic oscillation.