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介绍一种在低阻P型硅衬底上用氢离子注入技术形成局部高阻硅掩膜,用电化学腐蚀选择性生长多孔硅微阵列的工艺流程。结果证明,用高阻硅掩膜选择性生长多孔硅具有很好的掩蔽效果,生成的多孔硅阵列的有序性和完整性良好。
A process of forming a local high resistance silicon mask by hydrogen ion implantation on a low resistance P type silicon substrate and using electrochemical etching to selectively grow the porous silicon microarray is introduced. The results show that the selective growth of porous silicon with a high resistivity silicon mask has a good masking effect, and the prepared porous silicon array has good order and integrity.