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▲我国纳米氮化镓研究获重大进展 中国科技大学应用化学系钱逸泰教授领导的课题组,对纳米氮化镓的研究取得重大进展,在国际上首次获得了常压下存在的纳米氮化镓晶体。这表明我国在这一领域的开发应用已经处于国际领先水平。氮化镓是一种用途广泛的光学涂层材料,在半导体等电子工业中发挥着重要作用。中国科大的这一最新研究成果,是在国际上首次用苯热合成技术在280℃的低温情况下,制得纳米六方氮化镓,其中还伴有少量的立方岩盐型氮化镓。而传统的纳米氮化镓晶体只能在试验室700℃～800℃的高温条件下小批量制得,这
▲ China has made significant progress in nano-GaN research group led by Prof. Qian Yitai, Department of Applied Chemistry, University of Science and Technology of China, made great progress in the research of nano-GaN. In the world for the first time, the nano- Gallium crystals. This shows that our country’s development and application in this area is already at the international advanced level. Gallium nitride is a versatile optical coating material that plays an important role in the semiconductor and other electronics industries. The latest research result of China University of Science and Technology is the first time in the world that benzene hexahydrate synthesis technology is used to produce nano-hexagonal gallium nitride at a low temperature of 280 ° C, and a small amount of cubic rock salt gallium nitride is also included therein. The traditional nano-GaN crystals only in the laboratory 700 ℃ ~ 800 ℃ under the conditions of high temperature in small quantities, which